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| HS-1100RH Data Sheet August 1999 File Number 4100.2 Radiation Hardened, Ultra High Speed Current Feedback Amplifier The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Intersil's proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. These devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. The HS-1100RH's wide bandwidth, fast settling characteristic, and low output impedance make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Deg. Differential Gain/Phase specifications (RL = 75). Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-94676. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm Features * Electrically Screened to SMD # 5962-94676 * QML Qualified per MIL-PRF-38535 Requirements * Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) * Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/s (Typ) * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns (Typ) * Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ) * High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ) * Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ) * Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si) * Latch Up . . . . . . . . . . . . . . . . . . . . . None (DI Technology) Applications * Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers * RF/IF Signal Processing * Flash A/D Driver * Imaging Systems Ordering Information ORDERING NUMBER 5962F9467602VPA 5962F9467602VPC HFA1100IJ (Sample) HFA11XXEVAL INTERNAL MKT. NUMBER HS7-1100RH-Q HS7B-1100RH-Q HFA1100IJ Evaluation Board TEMP. RANGE (oC) -55 to 125 -55 to 125 -40 to 85 Pinout HS-1100RH GDIP1-T8 (CERDIP) OR CDIP2-T8 (SBDIP) TOP VIEW NC -IN +IN V- 1 2 3 4 8 NC V+ OUT NC + 7 6 5 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 HS-1100RH Typical Applications Optimum Feedback Resistor The enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HS-1100RH in various gains. Although the bandwidth dependency on closed loop gain isn't as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier's unique relationship between bandwidth and RF. All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF , in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier's bandwidth is inversely proportional to RF . The HS-1100RH design is optimized for a 510 RF at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth. The table below lists recommended RF values for various gains, and the expected bandwidth. GAIN (ACL) -1 +1 +2 +5 +10 +19 BANDWIDTH (MHz) RS () traces connected to -IN, and connections to -IN should be kept as short as possible. An example of a good high frequency layout is the Evaluation Board shown in Figure 2. Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier's phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. 50 45 40 35 30 25 20 15 RF () 430 510 360 150 180 270 AV = +1 580 850 670 520 240 125 10 5 A = +2 V 0 0 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF) PC Board Layout The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10F) tantalum in parallel with a small value (0.1F) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground seen by the amplifier's inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing RS as CL increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, RS = 50, CL = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1, RS = 5, CL = 340pF. Evaluation Board The performance of the HS-1100RH may be evaluated using the HFA11XXEVAL Evaluation Board. The layout and schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office. 2 HS-1100RH VH 1 +IN OUT V+ VL VGND FIGURE 2A. TOP LAYOUT 500 R1 1 50 IN 0.1F -5V GND 2 3 4 10F 8 7 50 6 5 GND 0.1F 500 VH FIGURE 2B. BOTTOM LAYOUT 10F +5V OUT VL FIGURE 2C. SCHEMATIC FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT Typical Performance Characteristics Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified PARAMETERS Input Offset Voltage (Note 1) Average Offset Voltage Drift VIO CMRR VIO PSRR +Input Current (Note 1) Average +Input Current Drift - Input Current (Note 1) Average -Input Current Drift +Input Resistance - Input Resistance Input Capacitance Input Noise Voltage (Note 1) +Input Noise Current (Note 1) -Input Noise Current (Note 1) Input Common Mode Range Open Loop Transimpedance AV = -1 f = 100kHz f = 100kHz f = 100kHz VCM = 0V Versus Temperature VCM = 2V VS = 1.25V VCM = 0V Versus Temperature VCM = 0V Versus Temperature VCM = 2V CONDITIONS TEMPERATURE 25oC Full 25oC 25oC 25oC Full 25oC Full 25oC 25oC 25oC 25oC 25oC 25oC Full 25oC TYPICAL 2 10 46 50 25 40 12 40 50 16 2.2 4 18 21 3.0 500 UNITS mV V/oC dB dB A nA/oC A nA/oC k pF nV/Hz pA/Hz pA/Hz V k 3 HS-1100RH Typical Performance Characteristics PARAMETERS Output Voltage (Continued) Device Characterized at: VSUPPLY = 5V, RF = 360, AV = +2V/V, RL = 100, Unless Otherwise Specified CONDITIONS AV = -1, RL = 100 AV = -1, RL = 100 Output Current (Note 1) AV = -1, RL = 50 AV = -1, RL = 50 DC Closed Loop Output Resistance Quiescent Supply Current (Note 1) -3dB Bandwidth (Note 1) RL = Open AV = -1, RF = 430, VOUT = 200mVP-P AV = +1, RF = 510, VOUT = 200mVP-P AV = +2, RF = 360, VOUT = 200mVP-P Slew Rate AV = +1, RF = 510, VOUT = 5VP-P AV = +2, VOUT = 5VP-P Full Power Bandwidth Gain Flatness (Note 1) VOUT = 5VP-P To 30MHz, RF = 510 To 50MHz, RF = 510 To 100MHz, RF = 510 Linear Phase Deviation (Note 1) 2nd Harmonic Distortion (Note 1) To 100MHz, RF = 510 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2VP-P 3rd Harmonic Distortion (Note 1) 30MHz, VOUT = 2VP-P 50MHz, VOUT = 2VP-P 100MHz, VOUT = 2VP-P 3rd Order Intercept (Note 1) 1dB Compression Reverse Isolation (S12) 100MHz, RF = 510 100MHz, RF = 510 40MHz, RF = 510 100MHz, RF = 510 600MHz, RF = 510 Rise and Fall Time VOUT = 0.5VP-P VOUT = 2VP-P Overshoot (Note 1) Settling Time (Note 1) VOUT = 0.5VP-P, Input tR/tF = 550ps To 0.1%, VOUT = 2V to 0V, RF = 510 To 0.05%, VOUT = 2V to 0V, RF = 510 To 0.02%, VOUT = 2V to 0V, RF = 510 Differential Gain Differential Phase Overdrive Recovery Time NOTE: 1. See Typical Performance Curves for more information. AV = +2, RL = 75, NTSC AV = +2, RL = 75, NTSC RF = 510, VIN = 5VP-P TEMPERATURE 25oC Full 25oC to 125oC -55oC to 0oC 25oC Full 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC 25oC TYPICAL 3.3 3.0 65 50 0.1 24 580 850 670 1500 2300 220 0.014 0.05 0.14 0.6 -55 -49 -44 -84 -70 -57 30 20 -70 -60 -32 500 800 11 11 19 34 0.03 0.05 7.5 UNITS V V mA mA W mA MHz MHz MHz V/s V/s MHz dB dB dB Degrees dBc dBc dBc dBc dBc dBc dBm dBm dB dB dB ps ps % ns ns ns % Degrees ns 4 HS-1100RH Typical Performance Curves 120 90 OUTPUT VOLTAGE (mV) 60 30 0 -30 -60 -90 -120 5ns/DIV. OUTPUT VOLTAGE (V) VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified 1.2 0.9 0.6 0.3 0 -0.3 -0.6 -0.9 -1.2 5ns/DIV. FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2) FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2) GAIN (dB) NORMALIZED GAIN (dB) NORMALIZED GAIN 0 -3 -6 -9 -12 PHASE AV = +1 AV = +2 AV = +6 AV = +11 0 AV = +1 AV = +2 AV = +6 AV = +11 0.3 1 10 100 FREQUENCY (MHz) -90 -180 -270 -360 1K PHASE (DEGREES) 0 -3 -6 -9 -12 GAIN AV = -1 AV = -5 AV = -10 AV = -20 PHASE (DEGREES) PHASE (DEGREES) PHASE AV = -1 AV = -5 AV = -10 AV = -20 180 90 0 -90 -180 1K 0.3 1 10 100 FREQUENCY (MHz) FIGURE 5. NON-INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) FIGURE 6. INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) GAIN (dB) +3 0 -3 -6 PHASE GAIN RL = 1k GAIN (dB) NORMALIZED +6 +3 0 -3 -6 PHASE RL = 50 RL = 100 GAIN RL = 1k 0 -90 -180 PHASE (DEGREES) RL = 100 RL = 50 RL = 50 RL = 100 RL = 1k RL = 100 RL = 1k RL = 100 RL = 50 0 -90 RL = 1k RL = 100 RL = 1k -180 -270 -360 1K -270 -360 1K 0.3 1 10 100 FREQUENCY (MHz) 0.3 1 10 100 FREQUENCY (MHz) FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +1, VOUT = 200mVP-P) FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +2, VOUT = 200mVP-P) 5 HS-1100RH Typical Performance Curves +20 +10 GAIN (dB) 0 -10 -20 -30 0.160VP-P 0.500VP-P 0.920VP-P 1.63VP-P VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified (Continued) GAIN (dB) NORMALIZED +20 +10 0 -10 -20 -30 0.32VP-P 1.00VP-P 1.84VP-P 3.26VP-P 0.3 1 10 FREQUENCY (MHz) 100 1K 0.3 1 10 FREQUENCY (MHz) 100 1K FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +1) FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +2) GAIN (dB) NORMALIZED +20 +10 0 -10 -20 -30 0.96VP-P TO 3.89VP-P BANDWIDTH (MHz) 950 900 850 800 750 700 0.3 1 10 100 FREQUENCY (MHz) 1K -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +6) FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (AV = +1) +2.0 +1.5 DEVIATION (DEGREES) 0 GAIN (dB) -0.05 -0.10 -0.15 -0.20 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 100 0 15 30 45 60 75 90 105 120 135 150 FREQUENCY (MHz) FIGURE 13. GAIN FLATNESS (AV = +2) FIGURE 14. DEVIATION FROM LINEAR PHASE (AV = +2) 6 HS-1100RH Typical Performance Curves VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified 40 35 INTERCEPT POINT (dBm) 0.6 SETTLING ERROR (%) 0.4 0.2 0 -0.2 -0.4 -0.6 30 25 20 15 10 5 0 -4 1 6 11 16 21 26 TIME (ns) 31 36 41 46 0 100 200 300 FREQUENCY (MHz) 400 (Continued) FIGURE 15. SETTLING RESPONSE (AV = +2, VOUT = 2V) FIGURE 16. 3RD ORDER INTERMODULATION INTERCEPT (2-TONE) -30 -35 -40 DISTORTION (dBc) DISTORTION (dBc) 100MHz -45 -50 -55 -60 -65 -70 -5 -3 -1 1 3 5 7 9 OUTPUT POWER (dBm) 11 13 15 30MHz 50MHz -30 -40 -50 100MHz -60 -70 -80 -90 30MHz -100 -110 -5 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) 50MHz FIGURE 17. 2ND HARMONIC DISTORTION vs POUT FIGURE 18. 3RD HARMONIC DISTORTION vs POUT 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 35 30 25 20 15 10 5 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 RF = 510 VOUT = 1VP-P RF = 360 VOUT = 0.5VP-P RF = 360 VOUT = 2VP-P VOUT = 1VP-P OVERSHOOT (%) OVERSHOOT (%) VOUT = 0.5VP-P RF = 360 VOUT = 1VP-P VOUT = 2VP-P RF = 510 VOUT = 2VP-P RF = 510 VOUT = 0.5VP-P 400 500 600 700 800 900 1000 INPUT RISE TIME (ps) INPUT RISE TIME (ps) FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +2) 7 HS-1100RH Typical Performance Curves 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 360 400 440 480 520 560 600 FEEDBACK RESISTOR () 640 680 VSUPPLY = 5V, RF = 510, RL = 100, TA = 25oC, Unless Otherwise Specified 25 24 SUPPLY CURRENT (mA) 23 22 21 20 19 18 -60 -40 -20 0 20 40 60 80 (Continued) OVERSHOOT (%) 100 120 TEMPERATURE (oC) FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR (AV = +2, tR = 200ps, VOUT = 2VP-P) FIGURE 22. SUPPLY CURRENT vs TEMPERATURE 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 5 6 7 8 9 10 TOTAL SUPPLY VOLTAGE (V+ - V-, V) 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 -60 -40 -20 +IBIAS VIO -IBIAS 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) 0 20 40 60 80 TEMPERATURE (oC) 100 120 FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE 3.7 3.6 OUTPUT VOLTAGE (V) NOISE VOLTAGE (nV/HZ) 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (oC) 0 100 1K 10K FREQUENCY (Hz) | - VOUT | +VOUT 30 25 20 15 10 5 300 275 225 200 175 150 125 100 75 ENI eni INIiniINI+ ini+ 100K 50 25 0 NOISE CURRENT (pA/HZ) 250 FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE (AV = -1, RL = 50) FIGURE 26. INPUT NOISE vs FREQUENCY 8 BIAS CURRENTS (A) HS-1100RH Test Circuit V+ ICC VIN NC K2 = POSITION 1: 0.1 V VIO = X 100 VX X100 K2 = POSITION 2: -IBIAS = VX 50K K2 + 0.1 0.1 0.1 100 2 470pF 2 1 510 3 510 4 K3 10 0.1 + 100 100 510 510 7 + 10 0.1 DUT 6 1K VOUT - 200pF 100K (0.01%) +IBIAS = VZ 100K VZ + + HA-5177 0.1 IEE NOTES: V- 2. Unless otherwise noted, component value multiplier and tolerances shall be as follows: Resistors, 1%. Capacitors, F 10% 3. Chip Components Recommended. Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V+ (+5V) VOUT 50 2 50 VIN RS 50 V+ (+5V) VOUT RF 50 360 RG 360 2 50 VIN RS 50 RF + + - - 510 V- (-5V) V- (-5V) AV = +1 TEST CIRCUIT AV = +2 TEST CIRCUIT VOUT +2.5V 90% 90% +2.5V VOUT +250mV 90% 90% +250mV +SR -2.5V 10% 10% -SR -2.5V TR , +OS -250mV 10% 10% TF , -OS -250mV LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM 9 HS-1100RH Burn-In Circuit HS-1100RH CERDIP R3 Irradiation Circuit HS-1100RH CERDIP R3 R2 R1 D4 VD2 C2 1 2 3 4 8 D3 V+ C1 D1 V- + 7 6 5 R2 R1 1 2 3 4 C2 8 D3 V+ C1 + - 7 6 5 NOTES: 4. R1 = R2 = 1k, 5% (Per Socket). 5. R3 = 10k, 5% (Per Socket). 6. C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Min. 7. D1 = D2 = 1N4002 or Equivalent (Per Board). 8. D3 = D4 = 1N4002 or Equivalent (Per Socket). 9. V+ = +5.5V 0.5V. 10. V- = -5.5V 0.5V. NOTES: 11. R1 = R2 = 1k, 5%. 12. R3 = 10k, 5%. 13. C1 = C2 = 0.1F. 14. V+ = +5.5V 0.5V. 15. V- = -5.5V 0.5V. 10 HS-1100RH Die Characteristics DIE DIMENSIONS: 63 mils x 44 mils x 19 mils 1 mil (1600m x 1130m x 483m 25.4m) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kA 0.5kA Top Metallization: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AICu (2%) Thickness: Metal 2: 16kA 0.8kA Substrate: UHF-1, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Floating ADDITIONAL INFORMATION: Worst Case Current Density: 1.6 x 105 A/cm2 Transistor Count: 52 Metallization Mask Layout HS-1100RH +IN -IN V- VL BAL BAL VH V+ OUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 11 |
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